TY - GEN A1 - Lange, Felix A1 - Ernst, Owen A1 - Teubner, Thomas A1 - Richter, Carsten A1 - Schmidbauer, Martin A1 - Skibitzki, Oliver A1 - Schroeder, Thomas A1 - Schmidt, Peer A1 - Boeck, Torsten T1 - In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates T2 - Nano Futures N2 - Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm−2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si–Au droplets with SixGe1−x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements. KW - Crystal growth KW - Silicon KW - Germanium KW - Phase diagram Y1 - 2020 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/26095 UR - https://iopscience.iop.org/article/10.1088/2399-1984/ab82a0 SN - 2399-1984 VL - 4 IS - 3 SP - 1 EP - 8 ER -