TY - GEN A1 - Strobel, Carsten A1 - Alvarado Chavarin, Carlos A1 - Wenger, Christian A1 - Albert, Matthias A1 - Mikolajick, Thomas T1 - Vertical Graphene-Based Transistors for Power Electronics, Optoelectronics and Radio-Frequency Applications T2 - IEEE Nanotechnology Materials and Devices Conference (NMDC), Paestum, Italy, 22-25 October 2023 N2 - The combination of two-dimensional materials, such as graphene, with established thin films offers great opportunities for enabling next-generation vertical transistors for various applications. This paper gives a brief overview about different vertical transistor concepts using twodimensional materials proposed so far, e.g. the hot electron transistor and the Barristor. With the arrival of twodimensional materials, the hot electron transistor also experienced a revival with predicted cut-off frequencies in the THz range. The Barristor overcomes the weak current saturation of lateral graphene field-effect transistors and high on-off ratios up to 107 were demonstrated, which are suitable parameters for logic applications. By combining a semiconductor-graphene-semiconductor design of the simplest hot electron transistor with the Barristor operating principle a new device, called graphene adjustable-barriers transistor, can be realized. This new device concept provides the potential for RF, power electronics, and optoelectronic applications. KW - Graphene Y1 - 2023 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/32228 SN - 979-8-3503-3546-0 SN - 979-8-3503-3547-7 SN - 2473-0718 SP - 196 EP - 201 PB - Institute of Electrical and Electronics Engineers (IEEE) ER -