TY - GEN A1 - Strobel, Carsten A1 - Alvarado Chavarin, Carlos A1 - Knaut, Martin A1 - Völkel, Sandra A1 - Albert, Matthias A1 - Hiess, Andre A1 - Max, Benjamin A1 - Wenger, Christian A1 - Kirchner, Robert A1 - Mikolajick, Thomas T1 - High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density T2 - Advanced Electronic Materials N2 - Hot electron transistors (HETs) represent an exciting frontier in semiconductor technology, holding the promise of high-speed and high-frequency electronics. With the exploration of two-dimensional materials such as graphene and new device architectures, HETs are poised to revolutionize the landscape of modern electronics. This study highlights a novel HET structure with a record output current density of 800 A/cm² and a high current gain α, fabricated using a scalable fabrication approach. The HET structure comprises two-dimensional hexagonal boron nitride (hBN) and graphene layers wet transferred to a germanium substrate. The combination of these materials results in exceptional performance, particularly in terms of the highly saturated output current density. The scalable fabrication scheme used to produce the HET opens up opportunities for large-scale manufacturing. This breakthrough in HET technology holds promise for advanced electronic applications, offering high current capabilities in a practical and manufacturable device. KW - Graphene KW - Transistor Y1 - 2024 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/33127 SN - 2199-160X VL - 10 IS - 2 ER -