TY - JOUR A1 - Goryachko, Andriy A1 - Paloumpa, Ioanna A1 - Beuckert, Guido A1 - Burkov, Yevgen A1 - Schmeißer, Dieter T1 - The Interaction of Pr2O3 with 4H-SiC(0001)surface T2 - Physica status solidi / C N2 - Praseodymium oxide (Pr2O3) as a hetero-oxide on SiC(0001) represents a promising semiconductor / high-K dielectric material combination. We prepared thin films (<3 nm) of Pr2O3 on 4H-SiC(0001) surfaces by a wet chemical process involving aqueous solutions of Pr(NO3)3. Synchrotron radiation photoelectron spectroscopy (SR-PES) is used to study the chemical composition of these films after deposition and annealing in 300-900 %B0C range. The Si2p and C1s core level emissions are analysed in detail and reveal that praseodymium-silicate is formed at the interface. Our data are compared to corresponding studies of the Pr2O3 interaction with Si(001) surfaces. Y1 - 2005 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/2619 SN - 1610-1634 VL - 1 IS - 2 SP - 265 EP - 268 ER -