TY - GEN A1 - Wen, Hanying A1 - Augel, Lion A1 - Wang, Wenjuan A1 - Knobbe, Jens T1 - Characterization of AlSiCu/TiN/p-Si Schottky Contacts with Nanophotonic Structures for Near-infrared Photodetectors T2 - 2023 46th International Spring Seminar on Electronics Technology (ISSE) : 10-14 May 2023 : conference location: Timișoara, Romania N2 - Schottky photodetectors based on internal photoemission have the potential of an adjustable detection range in the near-infrared range and Si compatible technology integration. The external quantum efficiency of Schottky photodetectors can be improved using nanophotonic structures, which enhance the absorption of the device. However, the electrical properties of Schottky photodetectors deviate under an altered metal-semiconductor interface topography. We characterize a common layer system for metal contacts consisting of a TiN interstitial layer between the p-Si wafer and the AlSiCu metallization. By varying the thickness of the TiN we discuss how homogeneity of the sputtered layers influence device properties with different interface topographies. Through electrical wafer-level characterization, the characteristics of the Schottky contact are evaluated and compared to the ideal physical modelling. Y1 - 2024 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/32706 UR - https://ieeexplore.ieee.org/document/10168510 SN - 979-8-3503-3485-2 SN - 979-8-3503-3484-5 SP - 1 EP - 5 PB - IEEE CY - Piscataway, NJ ER -