TY - GEN A1 - Herold, Steven A1 - Acker, Jörg T1 - Measurement of the temperature dependence of lattice deformations in silicon using Raman microscopy T2 - Journal of Applied Physics N2 - The effect of heating and cooling in the range of 25–900 °C on the lattice deformations of diamond wire-sawn polycrystalline and scratched monocrystalline silicon surfaces was studied in detail using Raman microscopy. Mechanically treated silicon surfaces contain tensile or compressive strained silicon with varying deformation strength and areas with high-pressure silicon phases and amorphous silicon. It is shown that compressive deformed silicon relaxes after heating the sample to 600 °C, while tensile deformed silicon only relaxes after multiple heating and cooling cycles. Raman measurements during the heating and after the cooling phases reveal the individual thermal expansion and relaxation behavior of the deformed silicon states. Compressive deformed silicon relaxes during the heating phase, while tensile deformed silicon relaxes during the cooling phase. It is, therefore, possible to separately relax certain deformation states using thermal annealing without changing the topography of the surface. KW - Raman spectroscopy KW - mechanical stress KW - silicon KW - crystallization KW - relaxation KW - thermal treatment KW - solar cell Y1 - 2019 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/24319 UR - https://aip.scitation.org/doi/10.1063/1.5090476 SN - 1089-7550 VL - 126 ER -