TY - GEN A1 - Sullivan, J. T. A1 - Wilks, Regan G. A1 - Winkler, M. T. A1 - Weinhardt, Lothar A1 - Recht, D. A1 - Said, A. J. A1 - Newman, B. K. A1 - Zhang, Y. A1 - Blum, Monika A1 - Krause, S. A1 - Yang, Wan Li A1 - Heske, Clemens A1 - Aziz, M. J. A1 - Bär, Marcus A1 - Buonassisi, T. T1 - Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur N2 - We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L2,3 emission features are observed above the conventional Si valence band maximum, with intensity scaling linearly with S concentration. The lineshape of the S-induced features change across the insulator-to-metal transition, indicating a significant modification of the local electronic structure concurrent with the change in macroscopic electronic behavior. The relationship between the Si L2,3 XES spectral features and the anomalously high sub-band gap infrared absorption is discussed. KW - black silicon KW - solar cells KW - electronic surface structure KW - x-ray emission spectroscopy Y1 - 2012 UR - https://opus4.kobv.de/opus4-UBICO/frontdoor/index/index/docId/6744 ER -