Transient temperature phenomena during sublimation growth of silicon carbide single crystals
Please always quote using this URN: urn:nbn:de:0296-matheon-202
In this article, we use numerical simulation to investigate transient temperature
phenomena during sublimation growth of SiC single crytals via physical
vapor transport (also called the modified Lely method). We consider the evolution
of temperatures at the SiC source and at the SiC seed crystal, which
are highly relevant to the quality of the grown crystals, but inaccessible to
direct measurements. The simulations are based on a transient mathematical
model for the heat transport, including heat conduction, radiation, and radio
frequency (RF) induction heating. Varying the position of the induction coil
as well as the heating power, it is shown that the measurable temperature difference
between the bottom and the top of the growth apparatus can usually
not be used as a simple indicator for the respective temperature difference
between SiC source and seed. Moreover, it is shown that there can be a time
lack of 1.5 hours between the heating of the temperature measuring points
and the heating of the interior of the SiC source.
| Author: | Olaf Klein, Peter Philip |
|---|---|
| URN: | urn:nbn:de:0296-matheon-202 |
| Referee: | Jürgen Sprekels |
| Language: | English |
| Date of first Publication: | 14.01.2004 |
| Preprint Number: | Matheon Preprint #38 |


