Transient temperature phenomena during sublimation growth of silicon carbide single crystals
In this article, we use numerical simulation to investigate transient temperature phenomena during sublimation growth of SiC single crytals via physical vapor transport (also called the modified Lely method). We consider the evolution of temperatures at the SiC source and at the SiC seed crystal, which are highly relevant to the quality of the grown crystals, but inaccessible to direct measurements. The simulations are based on a transient mathematical model for the heat transport, including heat conduction, radiation, and radio frequency (RF) induction heating. Varying the position of the induction coil as well as the heating power, it is shown that the measurable temperature difference between the bottom and the top of the growth apparatus can usually not be used as a simple indicator for the respective temperature difference between SiC source and seed. Moreover, it is shown that there can be a time lack of 1.5 hours between the heating of the temperature measuring points and the heating of the interior of the SiC source.
|Author:||Olaf Klein, Peter Philip|
|Date of first Publication:||14.01.2004|
|Preprint Number:||Matheon Preprint #38|