Approaching intrinsic performance in ultra-thin silicon nitride drum resonators

  • We have fabricated circular silicon nitride drums of varying diameter (20 μm to 1 mm) and thickness (15 nm–75 nm) using electron beam lithography and measured the dissipation (Q−1) of these amorphous silicon nitride resonators using optical interferometric detection. We observe that the dissipation is strongly dependent on mode type for relatively large, thick membranes as predicted by the current models of dissipation due to clamping loss. However, this dependence is drastically reduced for smaller or thinner resonators, with thinner resonators showing higher quality factors, for low order modes. Highest quality factors that can be reached for these thin resonators seems be limited by an inWe have fabricated circular silicon nitride drums of varying diameter (20 μm to 1 mm) and thickness (15 nm–75 nm) using electron beam lithography and measured the dissipation (Q−1) of these amorphous silicon nitride resonators using optical interferometric detection. We observe that the dissipation is strongly dependent on mode type for relatively large, thick membranes as predicted by the current models of dissipation due to clamping loss. However, this dependence is drastically reduced for smaller or thinner resonators, with thinner resonators showing higher quality factors, for low order modes. Highest quality factors that can be reached for these thin resonators seems be limited by an intrinsic mechanism and scales linearly with the diameter of the membrane. Our results are promising for mass sensing and optomechanical applications where low mass and high Qs are desirable.show moreshow less

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Metadaten
Author:Vivekananda P. Adiga, B. Ilic, R. A. Barton, Ignacio Wilson-Rae, H. G. Craighead, J. M. Parpia
URN:urn:nbn:de:bvb:29-opus-38469
Document Type:Article
Language:English
Date of Publication (online):2012/11/08
Publishing Institution:Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Release Date:2012/11/08
Tag:amorphous semiconductors; cooling; crystal resonators; light interferometry; membranes
SWD-Keyword:-
Original publication:Journal of Applied Physics 112.6 (2012): 07.11.2012 <http://jap.aip.org/resource/1/japiau/v112/i6/p064323_s1>
Institutes:Naturwissenschaftliche Fakultät -ohne weitere Spezifikation-
Dewey Decimal Classification:530 Physik
PACS-Classification:07.10.Cm Micromechanical devices and systems (for micro- and nano-electromechanical systems (MEMS/NEMS), see 85.85.+j in electronic and magnetic devices; see also 87.80.Ek Mechanical and micromechanical techniques; 87.85.Ox Biomedical instrumentation and transduce
77.65.Fs Electromechanical resonance; quartz resonators
85.40.Hp Lithography, masks and pattern transfer; Micro- and nano-electromechanical systems (MEMS/NEMS) and devices, see 85.85.+j
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
Collections:Allianzlizenzen 2012

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