1550 nm ErAs:In(Al)GaAs large area photoconductive emitters

  • We report on high power terahertz (THz) emission from ErAs-enhanced In0.52Al0.48As-In0.53Ga0.47As superlattices for operation at 1550 nm. ErAs clusters act as efficient recombination centers. The optical power is distributed among a large, microstructured area in order to reduce the local optical intensity. A THz field strength of 0.7 V/cm (1 V/cm peak-to-peak) at 100 mW average optical power has been obtained, with emission up to about 4 THz in air, limited by the detection crystal used in the system.

Download full text files

Export metadata

  • Export Bibtex
  • Export RIS

Additional Services

Share in Twitter Search Google Scholar
Metadaten
Author:Sascha Preu, M. Mittendorff, H. Lu, Heiko B. Weber, S. Winnerl, A. C. Gossard
URN:urn:nbn:de:bvb:29-opus-38429
Document Type:Article
Language:English
Date of Publication (online):2012/11/08
Publishing Institution:Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Release Date:2012/11/08
Tag:III-V semiconductors; aluminium compounds; electron-hole recombination; erbium compounds; gallium arsenide
SWD-Keyword:-
Original publication:Applied Physics Letters 101.10 (2012): 07.11.2012 <http://apl.aip.org/resource/1/applab/v101/i10/p101105_s1>
Institutes:Naturwissenschaftliche Fakultät -ohne weitere Spezifikation-
Dewey Decimal Classification:500 Naturwissenschaften und Mathematik
PACS-Classification:72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
73.63.-b Electronic transport in nanoscale materials and structures (see also 73.23.-b Electronic transport in mesoscopic systems)
78.70.Gq Microwave and radio-frequency interactions
81.05.Ea III-V semiconductors
Collections:Allianzlizenzen 2012

$Rev: 12793 $