1550 nm ErAs:In(Al)GaAs large area photoconductive emitters

  • We report on high power terahertz (THz) emission from ErAs-enhanced In0.52Al0.48As-In0.53Ga0.47As superlattices for operation at 1550 nm. ErAs clusters act as efficient recombination centers. The optical power is distributed among a large, microstructured area in order to reduce the local optical intensity. A THz field strength of 0.7 V/cm (1 V/cm peak-to-peak) at 100 mW average optical power has been obtained, with emission up to about 4 THz in air, limited by the detection crystal used in the system.

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Metadaten
Author:Sascha Preu, M. Mittendorff, H. Lu, Heiko B. Weber, S. Winnerl, A. C. Gossard
URN:urn:nbn:de:bvb:29-opus-38429
Document Type:Article
Language:English
Date of Publication (online):2012/11/08
Publishing Institution:Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Release Date:2012/11/08
Tag:III-V semiconductors; aluminium compounds; electron-hole recombination; erbium compounds; gallium arsenide
SWD-Keyword:-
Original publication:Applied Physics Letters 101.10 (2012): 07.11.2012 <http://apl.aip.org/resource/1/applab/v101/i10/p101105_s1>
Institutes:Naturwissenschaftliche Fakultät / Naturwissenschaftliche Fakultät -ohne weitere Spezifikation-
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 50 Naturwissenschaften / 500 Naturwissenschaften und Mathematik
PACS-Classification:70.00.00 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES / 72.00.00 Electronic transport in condensed matter (for electronic transport in surfaces, interfaces, and thin films, see section 73; for electrical properties related to treatment conditions, see 81.40.Rs; for transport properties of superconductors, see 74.25.Fy; / 72.20.-i Conductivity phenomena in semiconductors and insulators (see also 66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves) / 72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
70.00.00 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES / 72.00.00 Electronic transport in condensed matter (for electronic transport in surfaces, interfaces, and thin films, see section 73; for electrical properties related to treatment conditions, see 81.40.Rs; for transport properties of superconductors, see 74.25.Fy; / 72.40.+w Photoconduction and photovoltaic effects
70.00.00 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES / 73.00.00 Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (for electronic structure and electrical properties of superconducting films and low-dimensional structures, see 74.78.-w; for computational / 73.63.-b Electronic transport in nanoscale materials and structures (see also 73.23.-b Electronic transport in mesoscopic systems)
70.00.00 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES / 78.00.00 Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter / 78.70.-g Interactions of particles and radiation with matter / 78.70.Gq Microwave and radio-frequency interactions
80.00.00 INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY / 81.00.00 Materials science / 81.05.-t Specific materials: fabrication, treatment, testing, and analysis; Superconducting materials, see 74.70.-b and 74.72.-h; Magnetic materials, see 75.50.-y; Optical materials, see 42.70.-a; Dielectric, piezoelectric, and ferroelectric materials, see 77.84.- / 81.05.Ea III-V semiconductors
Collections:Universität Erlangen-Nürnberg / Allianzlizenzen / Allianzlizenzen 2012

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