Precise control of epitaxy of graphene by microfabricating SiC substrate

  • Epitaxial graphene (EG) on SiC is promising owing to a capability to produce high-quality film on a wafer scale. One of the remaining issues is microscopic thickness variation of EG near surface steps, which induces variations in its electronic properties and device characteristics. We demonstrate here that the variations of layer thickness and electronic properties are minimized by using microfabricated SiC substrates which spatially confines the epitaxy. This technique will contribute to the realization of highly reliable graphene devices.

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Metadaten
Author:H. Fukidome, Y. Kawai, Felix Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Thomas Seyller, M. Suemitsu
URN:urn:nbn:de:bvb:29-opus-38387
Document Type:Article
Language:English
Date of Publication (online):2012/11/08
Publishing Institution:Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Release Date:2012/11/08
Tag:epitaxial growth; epitaxial layers; graphene; microfabrication; semiconductor growth
SWD-Keyword:-
Original publication:Applied Physics Letters 101.4 (2012): 07.11.2012 <http://apl.aip.org/resource/1/applab/v101/i4/p041605_s1>
Institutes:Naturwissenschaftliche Fakultät -ohne weitere Spezifikation-
Dewey Decimal Classification:500 Naturwissenschaften und Mathematik
Collections:Allianzlizenzen 2012

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