Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

  • Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon replicas. The stretch frequencies of the defect were observed up to the fifth harmonic. The Morse potential model accounts for the anharmonicity quite well and gives a very good prediction of the vibration energies up to the fifth harmonic with an error of less than 1%. First principles calculations show that the model of a dicarbon antisite defect along with its four nearest neighboring carbon atoms can explain the observed anharmonicity.

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Metadaten
Author:F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima, G. Pensl
URN:urn:nbn:de:bvb:29-opus-38211
Document Type:Article
Language:English
Date of Publication (online):2012/11/08
Publishing Institution:Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Release Date:2012/11/08
Tag:ab initio calculations; anharmonic lattice modes; antisite defects; electron beam effects; helium
SWD-Keyword:-
Original publication:Applied Physics Letters 100.13 (2012): 07.11.2012 <http://apl.aip.org/resource/1/applab/v100/i13/p132107_s1>
Institutes:Naturwissenschaftliche Fakultät / Naturwissenschaftliche Fakultät -ohne weitere Spezifikation-
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
PACS-Classification:60.00.00 CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES / 61.00.00 Structure of solids and liquids; crystallography (for surface, interface, and thin film structure, see section 68) / 61.72.-y Defects and impurities in crystals; microstructure (for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology) / 61.72.U- Doping and impurity implantation / 61.72.up Other materials
60.00.00 CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES / 61.00.00 Structure of solids and liquids; crystallography (for surface, interface, and thin film structure, see section 68) / 61.80.-x Physical radiation effects, radiation damage (for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j); Radiation treatments, see 81.40.Wx / 61.80.Fe Electron and positron radiation effects
60.00.00 CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES / 63.00.00 Lattice dynamics (see also 78.30.-j Infrared and Raman spectra; for surface and interface vibrations, see 68.35.Ja; for adsorbate vibrations, see 68.43.Pq; for lattice dynamics of quantum solids, see 67.80.de) / 63.20.-e Phonons in crystal lattices (for phonons in superconductors, see 74.25.Kc; see also 43.35.Gk Phonons in crystal lattice, quantum acoustics-in Acoustics Appendix) / 63.20.Ry Anharmonic lattice modes
70.00.00 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES / 78.00.00 Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter / 78.55.-m Photoluminescence, properties and materials / 78.55.Hx Other solid inorganic materials
70.00.00 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES / 78.00.00 Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter / 78.66.-w Optical properties of specific thin films (for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m) / 78.66.Li Other semiconductors
Collections:Universität Erlangen-Nürnberg / Allianzlizenzen / Allianzlizenzen 2012

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