Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

  • Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon replicas. The stretch frequencies of the defect were observed up to the fifth harmonic. The Morse potential model accounts for the anharmonicity quite well and gives a very good prediction of the vibration energies up to the fifth harmonic with an error of less than 1%. First principles calculations show that the model of a dicarbon antisite defect along with its four nearest neighboring carbon atoms can explain the observed anharmonicity.

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Metadaten
Author:F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima, G. Pensl
URN:urn:nbn:de:bvb:29-opus-38211
Title of the journal / compilation:Applied Physics Letters 100.13 (2012): 07.11.2012 <http://apl.aip.org/resource/1/applab/v100/i13/p132107_s1>
Document Type:Article
Language:English
Date of Publication (online):2012/11/08
Publishing Institution:Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Release Date:2012/11/08
Tag:ab initio calculations; anharmonic lattice modes; antisite defects; electron beam effects; helium
SWD-Keyword:-
Original publication:Applied Physics Letters 100.13 (2012): 07.11.2012 <http://apl.aip.org/resource/1/applab/v100/i13/p132107_s1>
Institutes:Naturwissenschaftliche Fakultät -ohne weitere Spezifikation-
Dewey Decimal Classification:530 Physik
PACS-Classification:61.72.up Other materials
61.80.Fe Electron and positron radiation effects
63.20.Ry Anharmonic lattice modes
78.55.Hx Other solid inorganic materials
78.66.Li Other semiconductors
Collections:Allianzlizenzen 2012

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