Investigation of proximity effects in electron microscopy and lithography

  • A fundamental challenge in lithographic and microscopic techniques employing focused electron beams are so-called proximity effects due to unintended electron emission and scattering in the sample. Herein, we apply a method that allows for visualizing electron induced surface modifications on a SiN substrate covered with a thin native oxide layer by means of iron deposits. Conventional wisdom holds that by using thin membranes proximity effects can be effectively reduced. We demonstrate that, contrary to the expectation, these can be indeed larger on a 200 nm SiN-membrane than on the respective bulk substrate due to charging effects.

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Metadaten
Author:Marie-Madeleine Walz, Florian Vollnhals, Florian Rietzler, Matthias Schirmer, Hans-Peter Steinrück, Hubertus Marbach
URN:urn:nbn:de:bvb:29-opus-38138
Document Type:Article
Language:English
Date of Publication (online):2012/11/07
Publishing Institution:Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Release Date:2012/11/07
Tag:electron beams; electron emission; membranes; proximity effect (lithography); scanning electron microscopy
SWD-Keyword:-
Original publication:Applied Physics Letters 100.5 (2012): 06.11.2012 <http://apl.aip.org/resource/1/applab/v100/i5/p053118_s1>
Institutes:Naturwissenschaftliche Fakultät -ohne weitere Spezifikation-
Dewey Decimal Classification:540 Chemie und zugeordnete Wissenschaften
PACS-Classification:07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
Collections:Allianzlizenzen 2012

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