A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers

  • Current conduction mechanisms through a metal-oxide semiconductor capacitor with a 9.6 nm thick SiO2 dielectric layer are characterized via Fowler-Nordheim (FN) and Poole-Frenkel (PF) plots, as well as through the analysis of the power exponent parameter α = d(log I)/d(log V). It is shown that the evaluation by means of α is much more sensitive in the accurate identification of different current conduction mechanisms. If FN tunneling and PF conduction occur simultaneously, evaluation using the α-voltage (α-V) plot actually allows one to determine the fraction of each conduction mechanism quantitatively. Even a slight current saturation due to minority carrier depletion, which cannot be detecCurrent conduction mechanisms through a metal-oxide semiconductor capacitor with a 9.6 nm thick SiO2 dielectric layer are characterized via Fowler-Nordheim (FN) and Poole-Frenkel (PF) plots, as well as through the analysis of the power exponent parameter α = d(log I)/d(log V). It is shown that the evaluation by means of α is much more sensitive in the accurate identification of different current conduction mechanisms. If FN tunneling and PF conduction occur simultaneously, evaluation using the α-voltage (α-V) plot actually allows one to determine the fraction of each conduction mechanism quantitatively. Even a slight current saturation due to minority carrier depletion, which cannot be detected through the evaluation of the current-voltage characteristics using FN or PF plots, can be detected by the α-V plot.show moreshow less

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Metadaten
Author:Katsuhisa Murakami, Mathias Rommel, Vasil Yanev, Tobias Erlbacher, Anton J. Bauer, Lothar Frey
URN:urn:nbn:de:bvb:29-opus-37944
Document Type:Article
Language:English
Date of Publication (online):2012/11/07
Publishing Institution:Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Release Date:2012/11/07
Tag:MOS capacitors; Poole-Frenkel effect; minority carriers; silicon compounds; tunnelling
SWD-Keyword:-
Original publication:Journal of Applied Physics 110.5 (2011): 06.11.2012 <http://jap.aip.org/resource/1/japiau/v110/i5/p054104_s1>
Institutes:Technische Fakultät / Technische Fakultät -ohne weitere Spezifikation-
Dewey Decimal Classification:6 Technik, Medizin, angewandte Wissenschaften / 60 Technik / 600 Technik, Technologie
PACS-Classification:80.00.00 INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY / 84.00.00 Electronics; radiowave and microwave technology; direct energy conversion and storage / 84.32.-y Passive circuit components (see also 07.50.-e Electrical and electronic instruments, and components) / 84.32.Tt Capacitors (for electrochemical capacitors and supercapacitors, see 82.47.Uv)
Collections:Universität Erlangen-Nürnberg / Allianzlizenzen / Allianzlizenzen 2011

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