Precise control of epitaxy of graphene by microfabricating SiC substrate

Language
en
Document Type
Article
Issue Date
2012-11-08
Issue Year
2012
Authors
Fukidome, H.
Kawai, Y.
Fromm, Felix
Kotsugi, M.
Handa, H.
Ide, T.
Ohkouchi, T.
Miyashita, H.
Enta, Y.
Kinoshita, T.
Editor
Abstract

Epitaxial graphene (EG) on SiC is promising owing to a capability to produce high-quality film on a wafer scale. One of the remaining issues is microscopic thickness variation of EG near surface steps, which induces variations in its electronic properties and device characteristics. We demonstrate here that the variations of layer thickness and electronic properties are minimized by using microfabricated SiC substrates which spatially confines the epitaxy. This technique will contribute to the realization of highly reliable graphene devices.

Journal Title
Applied Physics Letters 101.4 (2012): 07.11.2012 <http://apl.aip.org/resource/1/applab/v101/i4/p041605_s1>
Citation
Applied Physics Letters 101.4 (2012): 07.11.2012 <http://apl.aip.org/resource/1/applab/v101/i4/p041605_s1>
DOI
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