Detection of nanosecond-scale, high power THz pulses with a field effect transistor

Language
en
Document Type
Article
Issue Date
2012-11-08
Issue Year
2012
Authors
Preu, Sascha
Lu, H.
Sherwin, M. S.
Gossard, A. C.
Editor
Abstract

We demonstrate detection and resolution of high power, 34 ns free electron laser pulses using a rectifying field effect transistor. The detector remains linear up to an input power of 11 ± 0.5 W at a pulse energy of 20 ± 1 μJ at 240 GHz. We compare its performance to a protected Schottky diode, finding a shorter intrinsic time constant. The damage threshold is estimated to be a few 100 W. The detector is, therefore, well-suited for characterizing high power THz pulses. We further demonstrate that the same detector can be used to detect low power continuous-wave THz signals with a post detection limited noise floor of 3.1 μW/math. Such ultrafast, high power detectors are important tools for high power and high energy THz facilities such as free electron lasers.

Journal Title
Review of Scientific Instruments 83.5 (2012): 07.11.2012 <http://rsi.aip.org/resource/1/rsinak/v83/i5/p053101_s1>
Citation
Review of Scientific Instruments 83.5 (2012): 07.11.2012 <http://rsi.aip.org/resource/1/rsinak/v83/i5/p053101_s1>
DOI
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