Investigation of proximity effects in electron microscopy and lithography

Language
en
Document Type
Article
Issue Date
2012-11-07
Issue Year
2012
Authors
Walz, Marie-Madeleine
Vollnhals, Florian
Rietzler, Florian
Schirmer, Matthias
Steinrück, Hans-Peter
Marbach, Hubertus
Editor
Abstract

A fundamental challenge in lithographic and microscopic techniques employing focused electron beams are so-called proximity effects due to unintended electron emission and scattering in the sample. Herein, we apply a method that allows for visualizing electron induced surface modifications on a SiN substrate covered with a thin native oxide layer by means of iron deposits. Conventional wisdom holds that by using thin membranes proximity effects can be effectively reduced. We demonstrate that, contrary to the expectation, these can be indeed larger on a 200 nm SiN-membrane than on the respective bulk substrate due to charging effects.

Journal Title
Applied Physics Letters 100.5 (2012): 06.11.2012 <http://apl.aip.org/resource/1/applab/v100/i5/p053118_s1>
Citation

Applied Physics Letters 100.5 (2012): 06.11.2012 http://apl.aip.org/resource/1/applab/v100/i5/p053118_s1

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